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a-Si:H薄膜的磁场诱导红外光谱变化的研究

Magnetic-Field-Induced IR Spectrum Change in GD a-Si:H Film

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【作者】 王晓临罗文秀李建华戴国才

【Author】 Wang Xiaolin/Institute of Crystal Materials,Shandong UniversityLuo Wenxiu/Department of Chemistry, Shandong UniversityLi Jianhua/Department of Chemistry, Shandong UniversityDai Guo Cai/Department of Physics,Shandong University

【机构】 山东大学晶体材料研究所山东大学化学系山东大学物理系 济南

【摘要】 本文研究了在磁场作用下a—Si:H薄膜的红外光谱的变化,发现了2000cm-1硅氢振动模向2100cm-1硅氢振动模的直接转变,并且在这种变化中键合氢的含量不变。提出了Si—H……Si弱耦合模型。

【Abstract】 The magnetic-field-induced IR spectrum change in GD a-Si:H is reported. The IR spectraof a-Si:H film were measured in alternating magnetic field.We found a shift from 2000cm-1 to2190cm-1depend upon the increase of the magnetic field strength. The threshold value ofthe magnetic field strength of the shift is 130GS, and the maxmium value corresponding tothe maxmium shift 800GS. The magnetic-field-induced state is a non-steady-state with veryshort relaxation time, in which IR spectra changes is not dependent on the bonded hydrogencontent. A simple model, Si-H.…Si weak couple, is suggested.

【关键词】 非晶硅红外光谱磁效应
【Key words】 a-Si:HIR spectraMagnetic effect
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1990年05期
  • 【下载频次】16
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