【摘要】 本文研究了Si注入GaAs的快速退火（RTA）特性。得出930—950℃退火5s为最佳退火条件。测量结果表明,当注入剂量大于10¹³cm^-2时,电子浓度呈饱和现象。为提高电子浓度本文提出Si,As双注入GaAs的方法,研究了（60—80）keV,（5—10）×10¹⁴Si/cm²+（150—180）keV,（5—30）×10¹⁴As/cm²注入并经RTA后的电特性。结果表明,双注入后样品中电子浓度有明显提高,对80keV,10¹⁵Si/cm²+150keV,3×10¹⁵As/cm²来说,电子浓度大于10¹⁹cm^-3。TEM观察表明,双注入样品的剩余缺陷密度大大低于单注入的情况。本文并对双注入补偿机理进行了讨论。更多还原

【Abstract】 Rapid themal annealing （RTA） of Si-implantation into GaAs is studied.The optimalcondition is annealing at temperatures ranging from 930℃ to 960℃ for 5s in dry N₂. Electron concentration of the Si, As dual-implantation GaAs is increased considerably. Themaximum concentration of 3×10¹⁹cm^-3 was obtained in specimens implanted with 80keV Siand 150 keV As. The implantation doses for Si and AS were 1×10¹⁵cm^-2and 3×10¹⁵cm^-2, respectively.TEM reveals that the removal of lattice damage of Si, As dual-implantation isbetter than that of single Si-implantation.更多还原