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电弧源喷射微粒及膜沉积率与弧电流关系

DEPENDENCE OF PARTICLES AND DEPOSITING RATE OF FILM PRODUCED BY COLD CATHODE ARC SOURCE ON ARC CURRENT

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【作者】 张世良; 陈鹏; 洪惠荫; 胡永年; 任妮; 孙玉珠; 翟晓明;

【Author】 Zhahg Shiliang, Chen Peng, Hong Huiyin, Hu Yongnian, Ren Ni, Sun Yuzhu, Zhai Xiaoming (Lanzhou Institute of Physics)

【机构】 兰州物理研究所; 兰州物理研究所;

【摘要】 利用冷阴极电弧源镀膜时,源喷射微粒其直径从亚微米至十几微米,随弧流增加,微粒密度、膜沉积率及大直径微粒均上升。本文给出了上述试验结果及按直径分布微粒密度图。给出了阴极工作表面平均温度计算公式,计算了灼坑(CRATER)半径与弧流关系,为合理选择源工作参数,进行源设计提供了依据。

【Abstract】 in Piating TiN film process by cold cathode are source, the particles jeted by source have oliameter from sub-micron to teu micron or more, Depositing rate of film, density of particles and number of large diameter particles are inereaaed with are current, measured results is oresented, Formula is given by which the overage temperature of surface of cathode is calculated, Dependence of oraters radius on are current are oalculated. These Provide foundation for selecting parameters of source operation and design source.

  • 【文献出处】 真空科学与技术 ,Vacuum Science and Technology , 编辑部邮箱 ,1989年06期
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