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Monte Carlo计算枧模拟—离子注入双层薄膜中的浓度分布
THE SIMULATION OF THE CONCENTRATION DISTRIBUTION OF IMPLANTED IONS IN THE BILAYER CONSTRUCTION BY MONTE CARLO COMPUTATION
【摘要】 使用Monte Carlo方法模拟350keVXe~+注入Cu/Ti双层结构,研究界面所造成的离子浓度分布的不连续性,并讨论界面位置对浓度分布的影响。在模拟600keV Bi注入Al/Ti双层结构时,当考虑有界面势存在,则其理论值与实验值符合得更好。
【Abstract】 The incontinuity of disttibution of ion concentratation is studied in this paper as using the Montc Carlo Method to simulate Cu-Ti bilayer films implanted with 350 keV Xe~+. And we discuss the distribution of ion concentration depending on the interface position. In the case of the simulation of Al-Ti bilayer films implanted with 600 keV Bi~+, the theoretical value is fairly coincides with the experimental value when the presenee of the interface potential is considered.
- 【文献出处】 真空科学与技术 ,Vacuum Science and Technology , 编辑部邮箱 ,1989年01期
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