【摘要】 本文报道了用真空蒸发法在砷化镓上淀积一氧化硅.在蒸发过程中保持砷化镓表面温度低于150℃.可获得低损伤的砷化镓-一氧化硅界面.更多还原

【Abstract】 A low-temperature process for producing the GaAs MIS structure based on the slow evaporation of powder SiO on the room-temperature GaAs substrate is developed. The as-grown GaAs-SiO MIS has a low interface state density of 8×1011 /cm2.eV and a low hysteresis. No frequency dispersion of the accumulation capacitance is found, as explained by the frequency-dependent permittivity of SiO.更多还原