【摘要】 本文对一般的平行板式等离子刻蚀机的电极进行了改进,在改进的刻蚀机上,用CF₄+H₂刻蚀SiO₂,刻蚀速率为700（?）/min,选择性、各向异性均较好。更多还原

【Abstract】 An usual plate plasma etching reactor electrode structure has been innovated, and with this improved etching structure, the etching rate about 700（?）/min, goed selectivity and anisotropy of etching silicon oxide are obtained using CF₄+H₂ as reactive gas.更多还原