【摘要】 本文研究了分子束外延（MBE）生长的n-N型Si/GaP（Ⅲ）异质结的界面特性。采用C-V法测量Si/GaP（Ⅲ）异质结的表观载流子浓度分布n（x）,从中导出了异质界面的导带失配值和界面电荷密度。实验结果表明,n-N型Si/GaP（Ⅲ）是一种弱整流结构。导带失配△E_c=0.10eV,界面电荷密度σ_i=8.8×10¹⁰cm^-2。通过表现载流子浓度n（x）的理论计算曲线与实验曲线符合较好,说明了实验结果的可靠性。更多还原

【Abstract】 In this paper, the interfacial properties of n-N type Si/GaP（lll）heterojunction prepared by MBE growth have been studied. The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe. The experimental result shows that the n-N type Si/GaP（111） forms a weak rectifying contact. The conduction band offset is △E_c = 0.l0eV and the interface charge density is σ_i = 8.8×10¹⁰cm². A theoretical simulation of the apparent carrier concentration distribution coincides well with the experimental curve, this confirms the reliability of our re-sults.更多还原