【摘要】 用低能电子衍射研究了GaAs（110）表面的弛豫。发现当理论与实验之间符合得最好时,得到的结构是,保持表面上As—Ga键长不变用一个27.32°±0.24°的旋转角（ω）,使As原子向外移动0.10±0.02,Ga原子向内移动0.55±0.02,而从Ga到第二层时空间为d₂=1.45±0.01,从第二层Ga到第三层的空间为d₃=2.01±0.01。对此结构As的背键长l_A5=2.43±0.01（收缩0.56％）,而Ga的背键长l_Ga=2.253±0.004（收缩8.0％）。更多还原

【Abstract】 We have studied the surface relaxation of GaAs (110) with Low-Energy-Electron-Diffra-cion. We find that the best agreemet between theory and experiment is obtained for such a structure in which the As atoms are tilted outward by 0.10±0.02A and the Ga atoms are tilted inward by 0.55±0.02 A, with an angle of rotation (ω) of 27.32° ±0.24°, keeping the bond length at surface As-Ga unchanged and a Ga to secondlayer spcing d2= 1.45±0.01 A and the second-layer Ga to third-layer spcing d3 = 2.01±0.01 A. For this structure, the As back bond length lAS =2.43± 0.01 A (contracted 0.56%) and the Ga back bood length lGa = 2.235 ± 0.004A (contracted 8.0%)更多还原