【摘要】 本文用自恰法严格计算了pin器件中的pi和in分离势垒区中电荷密度分布ρ（x）、电场分布ε（x）及耗尽区宽度W,然后缩小i层厚度使之部分重迭,再用电场迭加厚理算出耗尽区中的电场分布,在此基础上根据全收集条件δ_gmin=μ_fτ_pε_min算出最佳i层厚度X_e,发现当i层的费米能E_f向E_i靠近和gmin下降时,引起W和X_c显著增大更多还原

【Abstract】 Using the self-consistent method and numerical integration,the electrc charge density ρ（x）,and electric field ε（x） and depleted width W of pi and in of a-Si pin solar cells has been calculated respectively. Then based on the superposition principle of electric field intenssity,electric field intensity distribusion ε（x） of the depleted regionwis calcculated. On the basis of these results, the optimum i-layer width is determine under the codition of full collection. It is shown that as Fermi energy E_fcloses to Ei and g_min decreases, W and X are increased,drastically.更多还原