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PIN型a-Si太阳电池中的结电场分布、耗尽区宽度和最佳i层厚度的设计与计算
The Design and Calculation about the Depleted Region Width and Internal Electric Field Distribution and Optimum i-Iayer of a-Si PIN Solar Cells
【摘要】 本文用自恰法严格计算了pin器件中的pi和in分离势垒区中电荷密度分布ρ(x)、电场分布ε(x)及耗尽区宽度W,然后缩小i层厚度使之部分重迭,再用电场迭加厚理算出耗尽区中的电场分布,在此基础上根据全收集条件δgmin=μfτpεmin算出最佳i层厚度Xe,发现当i层的费米能Ef向Ei靠近和gmin下降时,引起W和Xc显著增大
【Abstract】 Using the self-consistent method and numerical integration,the electrc charge density ρ(x),and electric field ε(x) and depleted width W of pi and in of a-Si pin solar cells has been calculated respectively. Then based on the superposition principle of electric field intenssity,electric field intensity distribusion ε(x) of the depleted regionwis calcculated. On the basis of these results, the optimum i-layer width is determine under the codition of full collection. It is shown that as Fermi energy Efcloses to Ei and gmin decreases, W and X are increased,drastically.
【Key words】 Amorphous silicon; Internal electric field; Depleted region width; Optimum i-layer width;
- 【文献出处】 内蒙古大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Neimongol , 编辑部邮箱 ,1989年04期
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