【摘要】 本文根据a-Si材料的性能参数,计算了pin器件中的结电场分布ε（x）及其极小值ε_min,求出在一定条件下的满足全收集的最佳（大）i层厚度,并在这个基础上较严格地计算了E_g1=1.9eV的a-Si:H和E_g2=1.5eV的a-Si:Ge:H两种材料的pin单结太阳电池及由它们组成的二重结器件的光伏特性,在条件相近的条件下,a-Si:Ge:H pin单结太阳电池的效率与Mitchell的实驻结果相当接近。我们的二重结计算结果与DMM在相近条件下估算的结果接近。更多还原

【Abstract】 In this paper,the internal electrical field distribution of PIN device is calaulated by the performance parameter of a-Si material,and the optimum intrinsic layer is determined under the full collection. Moreover, using these results,the photovoltaic performance of single and tandem solar cells of Eg=1.9eV a-Si:H and Eg=1.5eV a-Si_1-x:Ge_x:H is determined, critically. Our calculated results of single a-Si_1-x:Ge_x:HPIN and tandem a-Si:H PIN/a-Si_1-x:Ge_x:PIN solar cells agree with MITCHELL’S and DALAL’S,respectively.更多还原