【摘要】 本文根据半导体材料的实际性能参数,并考虑到光电压V和耗尽区宽度W的变化对光电流π的影响,较严格地计算了GaP/CuInS₂和Cds/CuInSe₂两种异质结单晶薄膜太阳电池的光伏特性,并在J_■Ⅰ=J_■Ⅱ的条件下,对由上述两种异质结构成的二重结太阳电池的厚度进行匹配组合,然后计算了各种组合下的二重结太阳电池的光伏特性。更多还原

【Abstract】 In this paper, we calculated the photovoltaic behaviours of single crystalline thin-film GaP/CuInS₂and CdS/CuInSe₂ heterojunction solar cells, according to the performance parameter of semiconductor materials and considering the effects of photovoltage V, depletion layer width W and interface recombination loss on photo-current J_L. In the condition of J_?^Ⅰ=J_?^Ⅱ, the thickness of two fold junction solar cell which consists of two single-junction cells above—mentioned is matched. In the end, we calculated the photovoltaic behaviours of two fold junction solar cell in variours matched combinations.更多还原