【摘要】 本文根据半导体材料的性能参数对5μm厚度GaP/CuInS₂异质结单晶和多晶薄膜太阳电池在各种掺杂浓度下的光伏特性作了较严格的分析与计算。要计算中具体考虑到耗尽区密度W（或光电压V）的变化以及内表面复合损失对光电流J_L的影响,此外还用晶界复合损失模型计算了晶粒度对光电流及光伏特性的影响。发现存在一个最佳化的CulnS₂掺杂浓度Na_max,对于单晶和R=4μm的多晶电池,Na_max=10¹⁶/cm³,相应的最大转换效率η分别为16.2％和15.2％。更多还原

【Abstract】 In this paper, the photovoltaic behaviours of 5μm thickness GaP/CuInS₂polycrystalline and single crystalline heterojunctions thin-film solar cells are calculated in the various doping concentration, according to the performance parameter of semiconductor materials. In the calculation, we considered the effects of depletion layer width W, photovoltage V and interface recombination loss on photo-current J_L, and calculated the effects of grain size on photo-current J_Lappling the Rothwarf’s model about recombination loss in the grain boundary. It is found that a optimum doping concentration (Na_max) exist. For single crystalline and polycrystalline （R=4um） solar cell Na_maxis equal to 10¹⁶cm^-3, corresponding the efficiency are 16.2% and 15.2% respectively.更多还原