【摘要】 包括深中心发光在内的MOCVD-InP的低温光致发光光谱,表明了非故意掺杂外延层较高的纯度,初步判別了可能引入的杂质,并证明了电学测量与光学测量的一致性。更多还原

【Abstract】 The photoluminescence spectra at low temperature of InP grown by metalorganio chemical vapor deposition, involving the spectra of deep energy levels, have ind(?)cated the high purity of the nndoped epitaxial layers, identified the impurities probably introduced, and showed the consistency of electrical and optical measurements.更多还原