【摘要】 在Si(111)衬底上淀积55nm金属Pt膜的样品,用能量为300keV的As~+离子注入后热退火,从X射线衍射分析中观察到了PtSi的择优取向生长现象,生长的择优方向为(101)。从晶体学的角度出发,对离子束感生后退火形成的多晶PtSi膜的择优取向生长现象进行了研究和讨论,并与单纯热退火形成PtSi的情况进行了比较,提出了界面PtSi择优生长的可能机制。另外,观察到衬底Si的取向对PtSi的择优取向生长有影响,在Si(100)衬底上形成的PtSi无择优取向生长现象。 离子束 择优取向 PtSi更多还原

【Abstract】 Platinum films about 55nm thick were deposited onto Si (111) substrates. The samples were implanted with 300keV As+ ions at room temperature. The oriented growth of PtSi was observed from the results of X-ray diffraction analysis. The preferred orientation of PtSi induced by ion irradiation and post-annealing is (101). A possible growth mechanism of the interfacial PtSi was proposed on basis of the Bravais crystal theory and lattice matching condition.In addition, the oriented growth of PtSi was found to be affected by the orientation of Si substrates. Platinum silicide grown on Si (100) has no obvious orientation.更多还原