【摘要】 本文介绍了离子源使用不同放电物质所获得的双电荷态磷离子注入硅的工作。实验结果表明:在600kV离子注入机上利用双电荷态离子得到的1.2MeVP²⁺注入硅可获得适用于制备VLSI的CMOS电路中杂质反向分布N阱结构的掩埋层。更多还原

【Abstract】 V double-charged phosphorous ions implantation of silicon using different discharge materials in the ion source is described. Results show that 1.2 MeV P+ implantation can facilitate the formation of buried layers which are suitable for the fabrication of a retrograde N well structure in CMOS VLSI at a 600 keV ion-implanta-tion installation.更多还原