【摘要】 本文描述了一种新结构半导体激光器阵列——非对称补偿条形复合腔半导体激光器阵列.这种列阵是由7个或9个非对称半腔长交叉错开的条形电极形成7个或9个复合腔结构,光束在腔中以交叉的方式耦合.从该结构列阵得到了直到1.6I_th、发散角仅为3～4°的单瓣远场图样.更多还原

【Abstract】 In this paper, we presented a new structure semiconductor laser array——Cross-Coupled Asymmetric Offset Strip Composite Cavity Semiconductor LaserArray. These arrays were composed of seven or nine asymmetric half electrode strips, whose positions were offseted. They from seven or nine composite cavities and the light in which coupled in a cross way. Single-lobfar-field patterns of 3°-4°wide, were obtained from the array upto I= 1.6Ith.更多还原