【摘要】 本文报道了用喇曼光谱方法研究了注钕硅单晶中损伤层的温度特性。用硅520cm^-1特征峰的相对强度,来唯象地描述注入损伤层的无序度、折射率,消光系数等数参随退火温度的变化关系。发现550—600℃是消除损伤的最佳退火温区,并与方块电阻法所得结果进行了比较。更多还原

【Abstract】 The temperature dependence of the damaged layers in Nd-implanted silicon crystallines has deen investigated by Raman spectra.Using the relative intensities of silicon characteristic peak at 520cm^-1, the variation of parameters, such as the extent of disordeing, refractive index and extinction coefficient et al.,with annealing temperature has been phenomenologically discribed.It was found that 550℃ —600℃ is the optimun annealing temperature range for removing the ionimplantation damage. The comparison has also been carried out with the results obtained by square-resistance measurement.更多还原