【摘要】 <正> An efficient gettering is often performed with a back-side phosphorus diffusion; the mechanisms, not well understood, are generally attributed to induced dislocations and/or phosphide. In this work we demonstrate that the high-surface-concentration phosphorus diffusions and the final annealing at moderate temperature are able to produce gettering action. The increment of generation lifetime, measured by using MOS capacitors of starting silicon materials, and the decrement of the dark current of Dhotoelectric device are reported. The backside phosphorus diffusion (gettering) layer at different temperature has been analyzed with the help of SIMS, then we discuss the new gettering mechanism with the formation of a negatively charged pair and segregation annealing.更多还原