【Abstract】 The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon.更多还原