【Abstract】 The low-temperature processes for fabricating integrated circuits has become essential to the continuous development of smaller, faster solid-state devices and circuits. We have developed a new method, Rapid Lamp Heating/Very Low Pressure-Chemical Vapor Deposition for low-temperature silicon epitaxy. In this paper we study the microstructure of low-temperature(650-800℃) pseudo-homoepitaxial thin silicon films grown by RLH/VLP-CVD using HREM, TEM, SEM, X-ray diffraction technique and Raman spectroscopy. The results indicate that the epilayer is a high quality single crystal layer with a smooth and continuous interface.更多还原