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InGaAs/GaAs单量子阱的瞬态光荧光特性(英文)
Transcient Photoluminescence Behavior from the InGaAs/GaAs Single Quantum Well
【Abstract】 We used the time-resolved equipment consisting of a streak camera and normal photoluminescence set-up to measure the transcient behavior of the PL from the InGaAs/GaAs single quantum well sample, and thus obtained both the temporal resolution and the spectral resolution of the photoluminescence. A rapid decay of PL signal from the GaAs layer and the slow PL decay from the InGaAs well have beed found. From the experimetal results, the trapping efficiency of the carriers by the well is estimated to be about 80%.
【关键词】 量子阱;
InGaAs/GaAs;
瞬态;
荧光特性;
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年04期
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