【Abstract】 Quaternary Ⅲ-V semiconductor compound In1-xGaxAsyP1-y has recently attracted much attention to the application of various optoelectronic devices. And the lattice dynamics of InGaAsP is also interesting from a physical point of view.We reported a Raman spectra of quaternary InGaAsP epitaxial layers grown on InP over the whole range of composition (0≤y≤1 and 0≤x≤0.47). Raman measurements were performed in the backscattering geometry using a variety of lines of Ar+ laser in the room-temperature and liquid nitrogen temperature ambient. From these measuments, we confirmed that the phonon spectra of InGaAsP exhibited four-mode behaviour of the alloy. We plotted the peak frequencies of the Raman spectra as a function of y (or x), temperature and wavelength of incident light,and also discussed the composition dependence of the peaks intensities.更多还原