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In0.53Ga0.47As三元外延层散射机制的研究(英文)

Study of Scatter Mechanism in LPE Ternary Film InGaAs

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【作者】 汪开元尚中林黄玉辉曹康敏孙承烋高国全

【Author】 Wang Kaiyuan, Gao Zhongling, Huang Yuhui, Cao Kangming, Sun Chengxiou, Guo Guoquan(Department of Electronic Engineering, Southeast University)

【机构】 东南大学电子科学系东南大学电子科学系

【Abstract】 With method of Van Derberg,this paper gives the electron mobilities at different temperature in In0.53Ga0 .47As on InP by LPE, and analyses them from scatters of polaried optical phonons, ioned impurities and alloy. The results of the experiment and theory show that the scatter of ioned impurities and alloy scatter play an importment role at low temperature and the scatter of polaried optical phonon is superior at high temperature. It is also indicated that the alloy scatter is very, active for the ternary alloy density of about 1×1018cm-3. At last, we choose the optimal alloy potential △U= 0.83eV and give the limitation of Matthiessen rule.

【关键词】 外延层AsGaIn
  • 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年04期
  • 【下载频次】12
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