【Abstract】 The behavior of co-sputtering tungsten silicide after vacuum rapid annealing at 1000-1100℃ for 15s is investigated by Raman scattering, scanning electron microscope, X-ray diffraction, Auger electron spectrum and resistivity measurements. There are two Raman peaks at 331 and 450cm-1, and their intensities increase with the temperature rise of rapid thermal annealing. Scanning electron micrograph exhibits crystallization at 1000℃ and its enhancement with increase of annealing temperature. In addition to the (002), (101), (110), (103), (112) and (200) diffraction peaks of WSi2, there are some W5Si3 peaks in X-ray diffraction pattern. However, the composition of WSi2 is found in Auger electron spectrum at 1000℃, and the measurement results of sheet resistance also conclude WSi2 characteristics.更多还原