节点文献
重掺杂N型硅中低温本征载流子浓度(英文)
The Intrinsic Carrier Concentration in the Heavily Doped N-type Silicon at Low Temperature
【摘要】 <正> The intrinsic carrier concentration ni0 in the undoped and the lightly doped silicon has been studied from 77 to 300K[1]. Considering that there exists the bandgap narrowing △Eg in the heavily doping silicon, the effective intrinsic carrier concentration niE of the heavily doped silicon can be Written as:
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年04期
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