【Abstract】 Photoluminescence (PL) and DLTS data are presented for Te-doped AlxGa1-xAs crystals in which carrier concentrations at 300K vary between 1 ×1016 and 1×1017cm-8 and compositions cover the range of 0.1<x<0.8. PL spectra at 20K obtained for all compositions contain three major parts; the deep broad band with peak at about 1.45eV, the sharp and the broad peaks near the band-gap. Comparing the spectra at different temperatures and excited densities, we interpret the sharp peak near the band-gap as the emission of an exciton bound to a shallow donor and the others as DA-pair emissions. Data for the peaks near the band-gap are consistent with Dingle’s results, but the deep broad band at about 1.45eV is first presanted here. DLTS measurements for samples have been carried out, and results are given and compared with the PL data.更多还原