【Abstract】 The emission band around 2.268eV on the low temperature photolumi-nescence spectra of GaP:N doped with tellurium has been reexamined under the condition of very high resolution. It is suggested that the structure of the band may be composed of the LO phonon replica of isolated nitrogen bound excitons, the phonon-assisted emission from excitons bound to the excited states of NN1 pairs and the satellite line emitting from excitons bound to the neutral Te donors.更多还原