【Abstract】 Some deep levels induced by electron irradiation in oxygen-doped semi-insulating polycrystalline silicon (SIPOS) have been found and studied by using DLTS measurements in conjunction with the C-V method. Experimental results show that when the irradiation energy is changed, the introduction rates are varied, Its porsible effects on S1POS used as a field shielding passivant for high-voltage semiconductor devices are also discussed.更多还原