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ZnSe单晶的热壁外延生长(英文)

The Grown of ZnSe Single Crystal Film by Hot Wall Epitaxy

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【作者】 杨玉琨吴连民孟庆巨王海峰孙明岩

【Author】 Yang Yukun, Wu Lianmin, Meng QingjuWang Haifeng, Sun Mingyan (Measurement and Testing Center, Jilin University)

【机构】 吉林大学测试中心吉林大学测试中心

【Abstract】 We have successfully grown a ZnSe single crystal film on GaAs(100) by hoi wall epitaxy. We confirmed that the epilayer is ZnSe single crystal from the analysis of scanning eletron microscopy and X-ray diffraction. The strong near-band-edge emission is found in the PL spectra and the Es-band related to free exiton is also very strong. They are much stronger than the deep center band emission, which shows the perfection of the epilayer. We have also studied the ZnSe/GaAs interface by AES and XPS.

【关键词】 热壁外延ZnSe
  • 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年04期
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