【Abstract】 The facts that in a semicondutor layered structure LO-phonon modes are rather confined in each layer and the penetration of the vibrations into the adjacent layer is negligible are well accepted. We investigate the po-laronic effect on exciton in GaAs-AlGaAs quantum wells on the basis of an electron-and hole-LO-phonon interaction Hamiltonian incorporating the peculiaties of the dispersive confined LO-phonon. The calculation of the polaronic energy is performed by using LLP variational formalism. The results of the numerical calculation are compared with earlier works without considering the effect of confinement. It is found that the exciton binding energy increases by 10% when the LO-phonon confinement is considered.更多还原