【Abstract】 Thin films formed by the interfacial reaction of Co/Si (111) have been analysed by a X-ray diffractometer and Read camera. The error of Read camera was effectively decreased by comparing the diffraction patterns to be analysed with a reference pattern. The phase structures, lattice parameters and texture features of Co, Co2Si, CoSi and CoSi2 films and multi-films have been defermined. The evolution of diffractometer spectra for a series of samples annealed at 430℃ with different time demonstrated the competitive growth of Co2Si and CoSi layers in the interface region. This is the first time to certify this process by X-ray.更多还原