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多层溅射沉积的WSi_x膜的电学性质(英文)

Electrical Properties of WSi_x Films Deposited by Multilayer Sputtering

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【作者】 王晓平; 赵特秀;

【Author】 Wang Xiaoping, Zhao Texiu (Department of Physics, University of Science and Technology of China)

【机构】 中国科技大学物理系; 中国科技大学物理系;

【摘要】 <正> The refratory silicides are of interest as contact and interconnect materials for VLSI to improve the characteristics of devices because of their low and metal- like resistivities and their high temperature stability. Jn this paper, we report the electrical properties of WSix films. The sample was formed by multilayer sputtering with W DC target and Si magnetron target onto a rotated n-Si(111) substrate and was subsequently

  • 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年04期
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