节点文献
逆向统计模拟及在VLSI统计分析中的应用
Reverse Statistical Simulation and Its Application in Statistical Analysis of VLSI
【摘要】 本文在理论上提出了逆向统计模拟思想,并用以开发了NMOS数字集成电路统计模拟通用软件——STANMOS。应用该软件可定量得到工艺涨落及工艺干扰对电路性能的影响,分析电路性能的工艺灵敏度及成品率,确定主要影响电路性能一致性的工艺步骤。
【Abstract】 This paper theoretically advances the conception of reverse statistical simulation in the statistical analysis of VLSI,by which a statistical simulator of NMAS digital circuit STANMOS is developed. Using this simulator we can quantitatively obtain process disturbances and their impact on circuit performances, analyses process sensitivity of circuit performances and yield, and determine the main processes causing variation of circuit performances.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1989年03期
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