【摘要】 本文介绍了GaAs MESFET器件低频噪声测量系统,以及该器件低频噪声的特点。在分析器件中低频噪声可能来源的基础上,首次采用高能电子辐照技术并结合变温噪声测量、变频C-V等方法,对器件低频噪声产生机理进行了实验研究。更多还原

【Abstract】 This paper reports an experimental investigation on a low-frequency noise mechanism in GsAs MESFET devices. A low-frequency noise measuring system and the low-frequency noise spectrum of GaAs MESFET’s are presented. Based on the analysis of the low-frequency noise mechanism possibly generated in GaAs MESFET devices, authors have experimentally researched the low-frequency noise mechanism first utilizing electron irradiation in combination with other methods, such as temperature-varying noise measurments and frequenccy-varying C-V.更多还原