【摘要】 用X射线发散束赝Kossel线方法测量GaInAs/InP晶格失配是一种较可取的方法。用此法对于以InP为衬底,厚为7.79μm的GaInAs外延层作精确测量,发现其最大的晶格失配率为2.7×10^-3,而且在整个样品范围内晶格失配率并不均匀,在某些方向上还存在着取向差。更多还原

【Abstract】 The livergent-beam X-ray pseudo-Kossel method is capable of measuring the lattice mismatches between the deposited and substrate materials. In this paper we report the precise measurements of the mismatches between the epitaxial GalnAs layer and the InP substrate, with a value of 2.7×10-3 and some orientation misalignments and non-uniform mismatches existing in whole sample.更多还原