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几种无限供应的金属/硅体系离子束混合相变
THE ION BEAM INDUCED PHASE TRANSFORMATION IN UNLIMITED SUPPLY SYSTEMS OF METAL AND SILICON
【摘要】 研究了五种无限供应的 Bilayer 膜金属/硅体系中(Ni/Si,Cu/Si,Nb/Si,Mo/Si,Ti/Si),因离子束注入引起的界面原子交混及相变过程。界面温度和注入离子剂量显著影响薄膜相变,在生成各种金属 Si 化物及固溶体时,反应温度和生长激活能大大降低,相变动力学过程与热退火反应不尽相同,诱导离子和基体取向对成相生长也有影响。讨论了相应微观机理。
【Abstract】 Five metal-silicon systems (Ni/Si,Cu/Si,Ti/Si,Nb/Si,Mo/Si) were chosen for this experiment and the results in a verity of condi-tions were summarized.The phase transformation by ion beam induced isnon-equilibrium process.This process might change the composition into ahigh free energy state and the compounds which are different from thatformed by thermal annealing.The induced action of ions decreases activeenergy and reactive temperature.It is also confirmed that the flux of atomicmigration plays an important role in ion beam induced thin film reation.
【Key words】 ion beam mixing; metal/silicon system; phase transformation; thin film transformation;
- 【文献出处】 材料科学进展 , 编辑部邮箱 ,1989年02期
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