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铝硅共晶合金的生长—固液界面过冷共晶片间距和生长速度间的关系
Al-Si Entectic Growth--Relations among Under Cooling of Solid Liquid Interface Eutectic Flake Spacing and Growth Rate
【摘要】 本文对铝硅共晶生长过程进行了讨论,在此基础上对Jackson—Hunt公式进行了修正。在生长速度于10 m/s/~200m/s内变化时所提出的修正式同实验结果吻台得很好。对修正公式也进行了讨论。
【Abstract】 In this paper the Al—Si eutectic growth process has been reviewed and a revision of rhe Jackson-Hunt formula is presented, The revised formula is in better agreement with the experimental results when the growth rate of the eutectic ranes from 10μm/s to 200μm/s, Also, some discussions are teken on the revised formula.
【关键词】 生长;
共晶;
界面过冷;
共晶片间距;
铝硅合金;
【Key words】 growth; eutectic; interface undercooling; eutectic flake spacing; aluminium-silicon alloys;
【Key words】 growth; eutectic; interface undercooling; eutectic flake spacing; aluminium-silicon alloys;
- 【文献出处】 金属科学与工艺 , 编辑部邮箱 ,1989年02期
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