【摘要】 本文采用PECVD方法制备了SnO₂薄膜,对薄膜进行了红外光谱和表面光电压谱测量发现,薄膜表面化学吸附O₂^2-和O^-离子基团,成为反应活性中心、电子转移的桥梁,推测了SnO₂表面与乙醇气体敏感反应历程.SnO_?薄膜淀积在n-Si上,使其表面光电压信号增强二个数量级以上,我们认为是SnO₂/n-Si异质结作用和消反射作用的结果.更多还原

【Abstract】 This paper reports the preparation of the tin dioxide films deposited at 170℃ by meansof the plasma enhanced chemical vapor deposition （PECVD） and measure ments of infraredspectrum and surface photovoltaic spectrum.The experimental results show that two species ofO₂^2- and O^- are chemisorpted on the surface of the SnO₂ films as sensing activators of the re-action and medium of the charge transfer.The sensing mechanism of the SnO₂ films to thealcohol （C₂H₅-OH） is given.For a SnO₂ film deposited on an n-Si wafer, the surface photo-voltaic relative intensity increases over two orders of magnitude. We attribute the effect tothe action of the heterojunction and antireflection.更多还原