【摘要】 本文建立了MLS隧道器件的电流-电压特性的数值模拟程序,提出了一种新的计算方法:龙格-库塔数值积分与边界条件的预估-校正处理相结合的算法.利用建立的程序模拟计算了两种不同氧化层厚度的MIS隧道器件的电流-电压特性.对TiW/Si肖特基二极管,考虑了界面态的静态和动态影响,模拟特性和实验结果相比,令人满意的一致.更多还原

【Abstract】 A program for the numerical simulation of the current-voltage characteristics of MIS tun-nel devices is developed.This paper presents a new and efficient computational method. Thedifferential equations are integrated using Runge-Kutta integral method and the boundary con-ditions are satisfied according to a prediction-correction method.The current-voltage (I-V)characteristics for MIS tunnel diodes with thin and thick oxide are calculated using the prog-ram.Taking into account both the electrostatic and kinctic influences of interface states, asatisfactory fitting between the simulated and the experimental results of I-V characteristicsfer TiW/Si Schottky diode is obtained.更多还原