【摘要】 本文研究了经常规热退火和快速热退火后SIGaAs中S⁺注入的电学特性.热退火后,GaAs中注入S⁺的快扩散和再分布不决定于S⁺或砷空位V_AS的扩散而决定于离子注入增强扩散.使用快速热退火方法能抑制注入S⁺在GaAs中的增强扩散,明显减小S⁺的再分布,可以获得适合于制造GaAs MESFET器件的薄有源层.更多还原

【Abstract】 The electrical properties of S⁺ implanted into SI GaAs after conventionally thermal anne-aling （CTA）and rapidly thermal annealing （RTA） have been studied. The rapid diffusionand redistribution of S⁺ implanted into GaAs after CTA depend not on conventional diffusionof S or arsenic vacancy V_AS, but on enhanced diffusion by ion implantation.By RTA techniqueenhanced diffusion can be restrained, redistribution of S⁺ implanted can be decreased greatlyand thin active layer suitable for fabricating GaAs MESFET devices can be obtained.更多还原