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衬底对a-Si:H激光结晶的影响

Effect of Substrates on Laser Crystallization of a-Si:H

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【作者】 鲍希茂; 顾清; 黄信凡;

【Author】 Bao Ximao/Department of Physics, Nanjing UniversityGu Qing/Department of Physics, Nanjing UniversityHuang Xinfan/Department of Physics, Nanjing University

【机构】 南京大学物理系; 南京大学物理系;

【摘要】 文章报道了a-Si∶H在石英,SiO2/Si,WSi2/Si和Al/Si四种不同衬底上激光结合的结果.

【Abstract】 The laser crystallization of a-Si:H on different substrates was carried out.High qualitycrystallized films have been obtained on fused quartz,but not on SiO2/Si substrates because ofthe generation of bubbles and holes.For crystallization on WSi2/Si, a higher power must besupplied and grain size is not large enough.On Al/Si,regular liquid crystallization can not beobtained up to the temperature of melting point of Al.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1989年03期
  • 【下载频次】11
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