【摘要】 本文采用计算机辅助分析等方法,讨论了InGaAs/InP异质结双极晶体管(HBT)结构参数与其性能的关系.在此基础上,提出了一种准平面、双集电区HBT,及其相应的制作工艺.初步测试了器件的性能,就其与材料质量的关系作了讨论.文章还提出和制作了一种采用这种HBT为电子器件的光电子集成电路(OEIC).更多还原

【Abstract】 The relationship between the structure parameters and the characteristics of InGaAsP/InPheterojunction bipolar transistors (HBTs) has been studied by means of computer aided analysismethod.Based on it,a quasi-planar double collection region structure for the HBT and thefabrication techniques for the structure have been put forward.The effects of material qualityon the characteristics of HBTs have been discussed.And moreover,an InGaAsP/InP OEIC bas-ed on such kind of HBT has been analysed and fabricated.更多还原