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MBE[(AIxGa1-xAs)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究
Measurement of One-Dimensional MBE [(AlxGa1-xAs)1(GaAs)m]n/GaAs(001) Superlattice Structure Parameters by X-Ray Double Crystal Diffractometry
【摘要】 本文根据超晶格结构的台阶模型,利用X射线衍射的运动学模型,导出了超晶格的X射线衍射峰的相对光强比.利用X射线双晶衍射方法测定了MBE[(AlxGa1-xAs)1(GaAs)m]./GaAs(001)一维超晶格的衍射迴摆曲线,除超晶格的主衍射峰外,还观察到一级和二级卫星峰.由这些衍射峰之间的角距离和相对光强比,计算出了超晶格的结构参数,其中包括周期D、垒宽LB、量子阱宽度LZ和Al含量x值.
【Abstract】 Based on step structive model,the relative intensive rate of X-ray diffraction peaks ofsuperlattice has been derived.The roching curves of one-dimensional MBE [(AlxGa1-xAs)1(GaAs)m]a/GaAs (001) superlattice has been meaaured by the X-ray double-crystal diffracte-merry.The superlattice period D.AlxGa1-xAs layer thichness L? ,Al concentration x and GaAslayer thichness L? have been obtained from the angle separations △θ and relative intensities be-tween these satellite peaks around the main reflection peak appeared in the superlattice rocking(?)ves.
【Key words】 Superlattice; X-ray double-crystal diffraction; Rocking curve; Satellite peak; Structure parameter;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1989年02期
- 【被引频次】19
- 【下载频次】163