【摘要】 由一次曝光得到背射赝Kossel线,然后通过坐标变换和非线性最小二乘法,可以得到Newman方程参数,从而计算出样品相应的晶面间距.本实验测量了硅单晶d{533}晶面间距,其精度可达8×10^-6nm.本文讨论了背射赝Kossel一次曝光法的实验步骤及实验的主要误差来源.更多还原

【Abstract】 By coordinates transformation and calculation with the Least Square method, we can determine the parameters of the Newman equation which represents the back reflection pseudo-Kossel curve. From the parameters, the planar spacing d of the corresponding lattice planes can be calculated. In our experiment, the d {533} of a single crystal silicon is measured. The accuracy of measurement is about 8×10-cnm. The experimental procedures and the principal sources of error are also discussed.更多还原