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利用(n~V,-n~S)排列双晶衍射术测量晶片的微小弯曲形变
THE MEASUREMENT OF CURVATURE RADIIOF SLIGHTLY BENT CRYSTALS BY (n~V-n~S)DOUBLE-CRYSTAL DIFFRACTOMETRY
【摘要】 用Du Mond图解法分析了利用双晶衍射术测量晶片曲率半径的原理.提出了利用(nv,-ns)排列,仅用Ka1辐射测量晶片曲率半径的方法.此方法与通常所采用的(ns,-ns)排列,Ka1,Ka2双线法相比,灵敏度大大提高,可测量的曲率半径提高了一个量级.利用(nv,-ns)排列双晶衍射术测量了硅单晶片经As+离子注入后产生的微小弯曲形变.
【Abstract】 The Dumond graphic method is employed in the analysis of crystal curvature radius measurement. A new method for measuring the curvature radius using the (nv,-ns) double-crystal diffractometry with Ka1 spectrum only is proposed. This method is much more sensitive than the usually used (ns,-ns) double-crystal diffractometry with the Ka doublet method. The detectable limit of curvature can be improved about one order of magnitude. The curvature radius of the Si crystal after As+ ion implantation is measured by (nv,-ns) double-crystal diffractometry.
- 【文献出处】 应用科学学报 ,Journal of Applied Sciences , 编辑部邮箱 ,1988年02期
- 【被引频次】1
- 【下载频次】16