【摘要】 本文确定了掺有 La³⁺、Ce⁴⁺、pr³⁺、Sm³⁺、Nd³⁺的硫酸三甘肽（TGS）晶体的生长条件。测定了晶体中不同稀土离子的掺入量和晶体的电滞回线、热释电系数、介电常数等物理参数。结果表明,TGS 单晶体中掺入适量 Pr³⁺可以使其热释电性能得到明显改善。更多还原

【Abstract】 Single crystals of La³⁺,Ce⁴⁺, Pr³⁺, Nd³⁺, Sm³⁺ doped triglycine sulfate havebeen grown from low temperature solutions with the slow-cooling method.Thechanges of crystal properties due to dopants are described respectively.Content ofdopants in each crystal has been determined.Values of pyroelectric coefficients,dielectric constants,loss tangents and figures of merit are listed in detail.Com-parision of the properties between the doped TGS crystals and pure TGS crystalare given.It is found that TGS single crystal doped with suitable amount of Pr₃₊grows easily and has better pyroelectric properties than that of pure TGS singlecrystal.At 25℃,λ=5.21×10^-8C·K^-1·cm^-2, ε_r=28.7,tanδ=1.74×10^-3 and the fi-gure of merit is 1.81×10^-9C·K^-1·cm^-2 when the molar concentration of Pr³⁺ is1.05%.更多还原