【摘要】 本文对二次B样条函数构造MOS器件模型的方法进行了深入研究.在保证不增加内存占有量和具有相同的拟合精度的前提下,对这种构造方法进行了改进,从而使拟合器件电学特性的计算量由原来的O（N³）下降到O（N）.对改进的二次B样条函数插值模型在SPLICE^1.7上的实现进行了详细的讨论.初步运行结果表明,这种改进的插值模型具有运算速度快、拟合精度高,适应范围广等优点,具有一定的实用价值.更多还原

【Abstract】 In this paper,the algorithm of 1-3 dimentional 2-order least square B spline interpolation models for MOS devices is further researched and modified, so that the computational complexity is reduced from O （N³） to O（N） under the same fitting accuracy and the same memory requirement, where N is the number of spline base nodes. The realization of this fast algorithm in SPLICE^1.7 is discussed. Preliminary simulating result demonstrates that, comparing with another MOS models,this algorithm is more accurate, faster speed of run time and wider adaptation to various devices.更多还原