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硼和砷注入硅白光快速退火的研究
The Light Rapid Themal Ann aling (LR TA)For Boron and Ars nic Implantation Into Silicon
【摘要】 本文利用KST-1型白光快速退火炉研究了硼和砷注入硅的退火特性.在1100℃、10s以上白光退火后,硼和砷都达到了100%的电激活,薄层电阻的均匀性达1.8～2.0%,基本上消除了常规退火时产生的位错网.用退火后的样品制作二极管,得到了很好的P-N结特性.
【Abstract】 Tha effect of LRTA on B and As im plantation into Silicon With KST-1 annealing equipment Was investigated. The electrical activation of the implanted B and As annealed at 1100℃ for 10s can reach 100%, and the uniformity of the sheet resistance can be 1.8～2.0%. Usually the dislocation can be eliminated caused by wnventional termal annealing. A perfect P-N junction characteristics of the diodes fabricated on the annealed wafers can be observed.
- 【文献出处】 微电子学与计算机 ,Microelectronics & Computer , 编辑部邮箱 ,1988年10期
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