【摘要】 本文研究了1～3MeV高能硼离子注入n-型硅衬底后n-p-n埋层结构的形成,发现采用适当的退火条件可得到良好的埋层载流子浓度及分布;并可获得单晶及电学特性恢复得很好的表面层.对各种条件退火后的样品进行了扩展电阻测量;用沟道背散射及平面电镜观察注入退火前后的表面微结构;利用剖面电镜观察到二次缺陷的存在;通过范德堡-霍尔测量,得到了样品的霍尔迁移率.更多还原

【Abstract】 Formation of the n-p-n buried layer structure by use of 1-3 MeV level high energy implantation into n-Si(100) substrats was reported. It is found that not only the implanted buried layer in various depths beneath the surface,but also the good top crystalline layer were formed by a appropriate annealing, especially the double implantation enhancep annealing which is very useful for the new application of high energy ion implantation. The implanted samples under different annealing condition have been investigated mainly through Automatic Spreading Resistance Probe (ASR) measurement. The channeling RBS, plan-view and cross-sectional transmission electron microscopy have been used to observe the damage near the surface after B~+ ion implantation and the residual damage after annealing. Hall mobility has been tested using Van der Pauw-Hall measu rement.更多还原