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离子注入工艺的简化二维模拟
Simplified 2D Simulation of lon lmplantation Process
【摘要】 本文详细地论述了离子注人工艺的二维模拟.其中有关射程的计算不是采用列表插值法,而是直接求解LSS理论的基本方程.与过去解法的区别在于有关离子阻止本领的计算是采用较精确的解析公式.这使得计算射程变得非常简单,而且用这种方法计算的射程数据也与实验结果符合得很好.
【Abstract】 This paper discusses in detail the two dimensional simulation of ion implantation process,The computation of the ranges is done by directly solving the LSS’fundamental equations,not by using tabulated interpolation method used in present process simuation programs. The difference from old solutions is that the stopping powers are computed here by using the more accur analytic formulae.This makes the computation of the ranges very simple. and the computed data quite consisted with the experimental results.
- 【文献出处】 微电子学与计算机 ,Microelectronics & Computer , 编辑部邮箱 ,1988年04期
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